Moist adiabats with multiple condensing species: A new theory with application to giant planet atmospheres

We derived a new formula for calculating the moist adiabatic temperature profile of an atmosphere consisting of ideal gases with multiple condensing species. This expression unifies various formulas published in the literature and can be generalized to account for chemical reactions. Unlike previous methods, it converges to machine precision independent of mesh size. It accounts for any ratio of condensable vapors to dry gas, from zero to infinity, and for variable heat capacities as a function of temperature. Because the derivation is generic, the new formula is not only applicable to planetary atmosphere in the solar system, but also to hot Jupiters and brown dwarfs in which a variety of alkali metals, silicates and exotic materials condense. We demonstrate that even though the vapors are ideal gases, they interact in their effects on the moist adiabatic lapse rate. Finally, we apply the new thermodynamic model to study the effects of downdrafts on the distribution of minor constituents and thermal profile in the Galileo probe hotspot. We find that the Galileo Probe measurements can be interpreted as a strong downdraft that displaces an air parcel from 1 bar to the 4 bar level.Comment: 30 pages, 3 figures, accepted for publication in Journal of the Atmospheric Scienc

XML-Based Generator of C++ Code for Integration With GUIs

An open source computer program has been developed to satisfy a need for simplified organization of structured input data for scientific simulation programs. Typically, such input data are parsed in from a flat American Standard Code for Information Interchange (ASCII) text file into computational data structures. Also typically, when a graphical user interface (GUI) is used, there is a need to completely duplicate the input information while providing it to a user in a more structured form. Heretofore, the duplication of the input information has entailed duplication of software efforts and increases in susceptibility to software errors because of the concomitant need to maintain two independent input-handling mechanisms. The present program implements a method in which the input data for a simulation program are completely specified in an Extensible Markup Language (XML)-based text file. The key benefit for XML is storing input data in a structured manner. More importantly, XML allows not just storing of data but also describing what each of the data items are. That XML file contains information useful for rendering the data by other applications. It also then generates data structures in the C++ language that are to be used in the simulation program. In this method, all input data are specified in one place only, and it is easy to integrate the data structures into both the simulation program and the GUI. XML-to-C is useful in two ways: 1. As an executable, it generates the corresponding C++ classes and 2. As a library, it automatically fills the objects with the input data values

Open-Source Software for Modeling of Nanoelectronic Devices

The Nanoelectronic Modeling 3-D (NEMO 3-D) computer program has been upgraded to open-source status through elimination of license-restricted components. The present version functions equivalently to the version reported in "Software for Numerical Modeling of Nanoelectronic Devices" (NPO-30520), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 37. To recapitulate: NEMO 3-D performs numerical modeling of the electronic transport and structural properties of a semiconductor device that has overall dimensions of the order of tens of nanometers. The underlying mathematical model represents the quantum-mechanical behavior of the device resolved to the atomistic level of granularity. NEMO 3-D solves the applicable quantum matrix equation on a Beowulf-class cluster computer by use of a parallel-processing matrix vector multiplication algorithm coupled to a Lanczos and/or Rayleigh-Ritz algorithm that solves for eigenvalues. A prior upgrade of NEMO 3-D incorporated a capability for a strain treatment, parameterized for bulk material properties of GaAs and InAs, for two tight-binding submodels. NEMO 3-D has been demonstrated in atomistic analyses of effects of disorder in alloys and, in particular, in bulk In(x)Ga(1-x)As and in In(0.6)Ga(0.4)As quantum dots

Numerical Modeling of Nanoelectronic Devices

Nanoelectronic Modeling 3-D (NEMO 3-D) is a computer program for numerical modeling of the electronic structure properties of a semiconductor device that is embodied in a crystal containing as many as 16 million atoms in an arbitrary configuration and that has overall dimensions of the order of tens of nanometers. The underlying mathematical model represents the quantummechanical behavior of the device resolved to the atomistic level of granularity. The system of electrons in the device is represented by a sparse Hamiltonian matrix that contains hundreds of millions of terms. NEMO 3-D solves the matrix equation on a Beowulf-class cluster computer, by use of a parallel-processing matrix vector multiplication algorithm coupled to a Lanczos and/or Rayleigh-Ritz algorithm that solves for eigenvalues. In a recent update of NEMO 3-D, a new strain treatment, parameterized for bulk material properties of GaAs and InAs, was developed for two tight-binding submodels. The utility of the NEMO 3-D was demonstrated in an atomistic analysis of the effects of disorder in alloys and, in particular, in bulk In(x)Ga(l-x)As and in In0.6Ga0.4As quantum dots

Effect of electron-nuclear spin interactions on electron-spin qubits localized in self-assembled quantum dots

The effect of electron-nuclear spin interactions on qubit operations is investigated for a qubit represented by the spin of an electron localized in a self-assembled quantum dot. The localized electron wave function is evaluated within the atomistic tight-binding model. The magnetic field generated by the nuclear spins is estimated in the presence of an inhomogeneous environment characterized by a random nuclear spin configuration, by the dot-size distribution, by alloy disorder, and by interface disorder. Due to these inhomogeneities, the magnitude of the nuclear magnetic field varies from one qubit to another by the order of 100 G, 100 G, 10 G, and 0.1 G, respectively. The fluctuation of the magnetic field causes errors in exchange operations due to the inequality of the Zeeman splitting between two qubits. We show that the errors can be made lower than the quantum error threshold if an exchange energy larger than 0.1 meV is used for the operation.Comment: 15 pages, 2 figure

Web Program for Development of GUIs for Cluster Computers

WIGLAF (a Web Interface Generator and Legacy Application Facade) is a computer program that provides a Web-based, distributed, graphical-user-interface (GUI) framework that can be adapted to any of a broad range of application programs, written in any programming language, that are executed remotely on any cluster computer system. WIGLAF enables the rapid development of a GUI for controlling and monitoring a specific application program running on the cluster and for transferring data to and from the application program. The only prerequisite for the execution of WIGLAF is a Web-browser program on a user's personal computer connected with the cluster via the Internet. WIGLAF has a client/server architecture: The server component is executed on the cluster system, where it controls the application program and serves data to the client component. The client component is an applet that runs in the Web browser. WIGLAF utilizes the Extensible Markup Language to hold all data associated with the application software, Java to enable platform-independent execution on the cluster system and the display of a GUI generator through the browser, and the Java Remote Method Invocation software package to provide simple, effective client/server networking

Development of a Nanoelectronic 3-D (NEMO 3-D) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots

Material layers with a thickness of a few nanometers are common-place in today’s semiconductor devices. Before long, device fabrication methods will reach a point at which the other two device dimensions are scaled down to few tens of nanometers. The total atom count in such deca-nano devices is reduced to a few million. Only a small finite number of “free” electrons will operate such nano-scale devices due to quantized electron energies and electron charge. This work demonstrates that the simulation of electronic structure and electron transport on these length scales must not only be fundamentally quantum mechanical, but it must also include the atomic granularity of the device. Various elements of the theoretical, numerical, and software foundation of the prototype development of a Nanoelectronic Modeling tool (NEMO 3-D) which enables this class of device simulation on Beowulf cluster computers are presented. The electronic system is represented in a sparse complex Hamiltonian matrix of the order of hundreds of millions. A custom parallel matrix vector multiply algorithm that is coupled to a Lanczos and/or Rayleigh- Ritz eigenvalue solver has been developed. Benchmarks of the parallel electronic structure and the parallel strain calculation performed on various Beowulf cluster computers and a SGI Origin 2000 are presented. The Beowulf cluster benchmarks show that the competition for memory access on dual CPU PC boards renders the utility of one of the CPUs useless, if the memory usage per node is about 1-2 GB. A new strain treatment for the sp3s∗ and sp3d5s∗ tight-binding models is developed and parameterized for bulk material properties of GaAs and InAs. The utility of the new tool is demonstrated by an atomistic analysis of the effects of disorder in alloys. In particular bulk InxGa1−xAs and In0.6Ga0.4As quantum dots are examined. The quantum dot simulations show that the random atom configurations in the alloy, without any size or shape variations can lead to optical transition energy variations of several meV. The electron and hole wave functions show significant spatial variations due to spatial disorder indicating variations in electron and hole localization

Nanowire electron scattering spectroscopy

Methods and devices for spectroscopic identification of molecules using nanoscale wires are disclosed. According to one of the methods, nanoscale wires are provided, electrons are injected into the nanoscale wire; and inelastic electron scattering is measured via excitation of low-lying vibrational energy levels of molecules bound to the nanoscale wire

Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

The effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots grown on GaAs is investigated with an atomistic valence-force-field model and an empirical tight-binding model. By comparing a dot with and without a wetting layer, we find that the inclusion of the wetting layer weakens the strain inside the dot by only 1% relative change, while it reduces the energy gap between a confined electron and hole level by as much as 10%. The small change in the strain distribution indicates that strain relaxes only little through the thin wetting layer. The large reduction of the energy gap is attributed to the increase of the confining-potential width rather than the change of the potential height. First-order perturbation calculations or, alternatively, the addition of an InAs disk below the quantum dot confirm this conclusion. The effect of the wetting layer on the wave function is qualitatively different for the weakly confined electron state and the strongly confined hole state. The electron wave function shifts from the buffer to the wetting layer, while the hole shifts from the dot to the wetting layer.Comment: 14 pages, 3 figures, and 3 table